High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction double-heterojunction enhance breakdown voltage (BV). Compared with inherent capability of conventional (Con. HEMT), built-in SBD exhibits a low turn-on (VRT) its VRT independent threshold gate bias. At off-state, fixed positive negative polarization charges form superjunction (PSJ). Therefore, depletion region extended more uniform E-field distribution obtained. Experimental results show that RC-PSJ-HEMT achieves 0.68 V, which decreases 69.1% compared Con. HEMT. The BV (with 7.5 μm LGD) increased 723 V from 202